J/A+A/321/293ivo://CDS.VizieR/J/A+A/321/293doi:10.26093/cds/vizier.33210293CDSSchilke P.Walmsley C.M.Pineau des Forets G.Flower D.R.1997-12-09T16:58:49Z1997-12-09T17:58:44ZCDS support team

CDS, Observatoire de Strasbourg, 11 rue de l'Universite, F-67000 Strasbourg, France

cds-question@unistra.frinterstellar-mediumatomic-physicsWe study the production of SiO in the gas phase of molecular outflows, through the sputtering of Si-bearing material in grains. The sputtering is driven by neutral particle impact on charged grains in C-type shocks, at the speed corresponding to ambipolar diffusion. Shock speeds in the range 10<v_s_<40km/s and preshock densities 10^4^<n_H_<10^7^cm^-3^ have been investigated. Sputtering of Si-bearing material in both the cores and the mantles of the grains is considered. We find that, for v_s_ of approximately 25km/s and n_H_ of the order 10^5^cm^-3^, column densities of SiO similar to those observed in molecular out flow regions can be generated by either mechanism. Impact by particles heavier than helium dominates the core-sputtering process for shock velocities of this order. The profiles of rotational transitions of SiO are computed and compared with observations of molecular outflows.1997A&A...321..293Shttps://cdsarc.cds.unistra.fr/viz-bin/cat/J/A+A/321/293CatalogResearchIsServedByTAP VizieR generic servicehttps://cds.unistra.fr/vizier-org/licences_vizier.htmlhttps://vizier.cds.unistra.fr/viz-bin/VizieR-2?-source=J/A+A/321/293https://vizier.iucaa.in/viz-bin/VizieR-2?-source=J/A+A/321/293http://vizieridia.saao.ac.za/viz-bin/VizieR-2?-source=J/A+A/321/293https://vizier.cds.unistra.fr/viz-bin/votable?-source=J/A+A/321/293https://vizier.iucaa.in/viz-bin/votable?-source=J/A+A/321/293http://vizieridia.saao.ac.za/viz-bin/votable?-source=J/A+A/321/293GETtext/xml+votablehttps://tapvizier.cds.unistra.fr/TAPVizieR/tapdefaultJ/A+A/321/293/table1a*Mantle and dissociative sputtering parametersrecnoRecord number assigned by the VizieR team. Should Not be used for identification.meta.recordintType[ab] a: mantle sputtering, b: dissociative sputteringmeta.notecharR1Beginning species of the reaction (1)phys.atmol.elementcharR2Resulting species of the reactionphys.atmol.elementcharSSputtering yield factorstat.paramdoubleEthSputtering threshold energyeVstat.paramfloatJ/A+A/321/293/table1b*Dissociation on impact parametersType[c] c: dissociation on impactmeta.notecharrecnoRecord number assigned by the VizieR team. Should Not be used for identification.meta.recordintR1Beginning species of the reactionphys.atmol.elementcharR2Resulting species of the reactionphys.atmol.elementcharY0Multiplicative constant (1)arith.factordoubleEdissDissociation energy (1)phys.energy;phys.mol.dissociationfloatJ/A+A/321/293/table2Rate coefficient parameters, for gas-phase reactions involving Si-bearing speciesrecnoRecord number assigned by the VizieR team. Should Not be used for identification.meta.recordintR1Beginning species of the reactionphys.atmol.elementcharR2Resulting species of the reactionphys.atmol.elementchargammaGamma coefficient (1)stat.paramdoublealpha? Alpha coefficient (1)stat.paramfloatbeta? Beta coefficient (1)Kstat.paramfloatNote? Note (2)meta.noteint